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Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films

机译：射频增强等离子体化学气相沉积（RF pECVD）反应器中样品高度对氮化硅薄膜光学性质和沉积速率的影响

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Mateusz Śmietana; Robert Mroczyński; Norbert Kwietniewski;
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1. Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films [J] . Mateusz #x00152, mietana, Norbert Kwietniewski, Materials . 2014,第2期

机译：射频等离子体增强化学气相沉积（RF PECVD）反应器中样品高度对氮化硅薄膜光学性能和沉积速率的影响
2. Evolution of optical properties with deposition time of silicon nitride and diamond-like carbon films deposited by radio-frequency plasma-enhanced chemical vapor deposition method [J] . Mateusz Smietana, Wojtek J. Bock, Jan Szmidt Thin Solid Films . 2011,第19期

机译：射频等离子体增强化学气相沉积法沉积氮化硅和类金刚石碳膜的光学性能随沉积时间的变化
3. Properties of silicon nitride thin overlays deposited on optical fibers - Effect of fiber suspension in radio frequency plasma-enhanced chemical vapor deposition reactor [J] . Smietana M., Dominik M., Mysliwiec M., Thin Solid Films . 2016,第mara31期

机译：沉积在光纤上的氮化硅薄覆盖层的特性-射频等离子体增强化学气相沉积反应器中纤维悬浮液的影响
4. Locating sensitivity minimizing process inputs in the plasma enhanced chemical vapor deposition (PECVD) of silicon nitride thin films: a neural network based approach [C] . Rosen, I.G., Parent, . 1999

机译：定位灵敏度最小化氮化硅薄膜的等离子体增强化学气相沉积（PECVD）中的工艺输入：基于神经网络的方法
5. Plasma enhanced chemical vapor deposition of silicon thin films: Characterization of film growth at different frequencies and gas compositions utilizing plasma diagnostics. [D] . Zhu, Lala. 2014

机译：等离子体增强了硅薄膜的化学气相沉积：利用等离子体诊断技术表征不同频率和气体成分下的薄膜生长。
6. Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films [O] . Mateusz Œmietana, Robert Mroczyński, Norbert Kwietniewski 2014

机译：射频等离子体增强化学气相沉积（RF PECVD）反应器中样品高度对氮化硅薄膜光学性能和沉积速率的影响
7. Microstructure of highly oriented, hexagonal, boron nitride thin films grown on crystalline silicon by radio frequency plasma-assisted chemical vapor deposition [O] . Andújar Bella José Luis, Bertrán Serra Enric, Manniete Y. 2012

机译：通过射频等离子体辅助化学气相沉积法在晶体硅上生长的高取向六方氮化硼薄膜的微观结构

Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films

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